MRAM including unit cell formed of one transistor and two magnetic tunnel junctions (MTJS) and method for fabricating the same

ABSTRACT

In an MRAM and method for fabricating the same, the MRAM includes a semiconductor substrate, a transistor formed on the semiconductor substrate, an interlayer dielectric formed on the semiconductor substrate to cover the transistor, and first and second MTJ cells formed in the interlayer dielectric to be coupled in parallel with a drain region of the transistor, wherein the first MTJ cell is coupled to a first bit line formed in the interlayer dielectric and the second MTJ cell is coupled to a second bit line formed in the interlayer dielectric, and wherein a data line is formed between the first MTJ cell and a gate electrode of the transistor to be perpendicular to the first bit line and the second bit line. The MRAM provides high integration density, sufficient sensing margin, high-speed operation and reduced noise, requires reduced current for recording data and eliminates a voltage offset.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor memory device and amethod for manufacturing the same. More particularly, the presentinvention relates to an MRAM including a unit cell formed of onetransistor and two magnetic tunnel junctions (MTJs) and a method forfabricating the same.

2. Description of the Related Art

MRAM, which is one type of next-generation memory device, has propertiesof both DRAM and SRAM, and also has nonvolatile characteristics of flashmemory.

MRAM typically includes a unit cell formed of one pass transistor 10 andone MTJ layer 20 as shown in FIG. 1, or includes two pass transistors,i.e., a first pass transistor 22 and a second pass transistor 24, andtwo MTJ layers, i.e., a first MTJ layer 22 a and a second MTJ layer 24a, as shown in FIG. 2.

The MRAM of FIG. 1 further includes a reference cell array (not shown)corresponding to an intermediate value between logic “0” and logic “1,”while in the MRAM of FIG. 2, a cell formed of the second pass transistor24 and the second MTJ layer 24 a is used as a reference cell of a cellformed of the first pass transistor 22 and the first MTJ layer 22 a.

Thus, in the MRAM of FIG. 2, when data (e.g., “1”) is recorded in thecell formed of the first pass transistor 22 and the first MTJ layer 22a, opposite data (e.g., “0”) is simultaneously recorded in the cellformed of the second pass transistor 24 and the second MTJ layer 24 a.

In the MRAM of FIG. 2, since a unit cell includes a main cell, wheredata is stored, and a reference cell, where inverted data of the datastored in the main cell is stored, a sensing margin of the MRAM is twiceas wide as that of the MRAM of FIG. 1. Accordingly, data can be readmore exactly using the MRAM of FIG. 2 than the MRAM of FIG. 1. Also, asshown in FIG. 2, since the main cell and the reference cell form a pair,noise in the unit cell can be reduced.

However, as a unit cell of the MRAM of FIG. 2 occupies a wider area thana unit cell of the MRAM of FIG. 1, the MRAM of FIG. 2 has a lowerintegration density than the MRAM of FIG. 1. However, because the MRAMof FIG. 1 has a smaller sensing margin than the MRAM of FIG. 2, amagnetic resistance (MR) ratio of the MTJ layer 20 should be higher thanthat of the first and second MTJ layers 22 a and 24 a, and the MTJ layer20 should be uniform to normally operate the MRAM.

In FIGS. 1 and 2, reference numerals BL, DL, WL, and /BL respectivelydenote a bit line, a data line used with the bit line BL for recordingdata, a word line, and a bit line where inverted data of the dataapplied to the bit line BL is applied. The data line DL of FIG. 1 isdisposed below the MTJ layer 20, as illustrated in FIGS. 3 and 4.

FIG. 3 illustrates a typical method for reading data recorded in an MRAMformed of one pass transistor and one MTJ layer.

Referring to FIG. 3, a predetermined voltage is applied to the word lineWL such that the pass transistor 10 is turned on. Then, a read currentI_(R) is applied through the pass transistor 10 to the MTJ layer 20.Here, the data recorded in the MTJ layer 20 is read using a measuredvoltage. In FIG. 3, reference numerals S and D denote a source and adrain of the pass transistor 10. A conductive plug 26 is coupled to thedrain D of the pass transistor 10 and a pad conductive layer 28 isformed on the conductive plug 26.

The foregoing method of reading data is similar to a method of readingdata recorded in a MRAM having a twin-cell structure as shown in FIG. 2.

That is, in the MRAM of FIG. 2, the same amount of current is applied toboth the main cell and the reference cell, and then voltages of bitlines BL and /BL are compared, and a difference therebetween is read.During this operation, drain voltages of the first and second passtransistors 22 and 24 may be changed to offset each other.

Meanwhile, a typical method of recording data in a MRAM formed of onepass transistor and one MTJ layer is performed by shifting a magnetizedstate of the MTJ layer.

Specifically, referring to FIG. 4, a predetermined first write currentIw₁ and a predetermined second write current Iw₂ are applied to the bitline BL and the data line DL, respectively. Here, a magnetic fieldoccurs due to the first and second write currents Iw₁ and Iw₂, and amagnetized state of the MTJ layer 20 is shifted due to the magneticfield such that the MTJ layer 20 has magnetic resistance correspondingto data “0” or “1.”

In the MRAM having a twin cell structure as shown in FIG. 2, data isrecorded by applying predetermined write currents to the bit lines BLand /BL and the data line DL.

Specifically, a current in a direction opposite to a direction in whicha current is applied to the bit line BL is applied to the bit line /BLin a state in which the first pass transistor 22 and the second passtransistor 24 are turned off. As a result, the first MTJ layer 22 a andthe second MTJ layer 24 a are polarized in opposite directions to havedifferent magnetic resistances. That is, predetermined data is recordedin the first MTJ layer 22 a while inverted data of the predetermineddata is recorded in the second MTJ layer 24 a.

As described above, although the MRAM of FIG. 1 enables high integrationdensity, an MR ratio thereof should be higher due to a low sensingmargin and the MTJ layer should be uniform. The MRAM of FIG. 2 enables ahigh-speed operation, a sufficient sensing margin, and reduced noise,but has the disadvantage of a relatively low integration density owingto an increased area of a unit cell.

SUMMARY OF THE INVENTION

The present invention provides an MRAM having a high integration densityand which enables a sufficient sensing margin and reduced noise.

The present invention provides an MRAM including one transistor and twoMTJ layers and having an integration density as high as that of an MRAMincluding a single cell formed of one transistor and one MTJ layer, andwhich enables a sufficient sensing margin and reduced noise.

The present invention also provides a method for fabricating the MRAMincluding one transistor and two MTJ layers and having an integrationdensity as high as that of an MRAM including a single cell formed of onetransistor and one MTJ layer, and that enables a sufficient sensingmargin and reduced noise.

In an effort to provide these and other features, it is a feature of anembodiment of the present invention to provide an MRAM including asemiconductor substrate, a transistor formed on the semiconductorsubstrate, an interlayer dielectric formed on the semiconductorsubstrate to cover the transistor, and first and second MTJ cells formedin the interlayer dielectric to be coupled in parallel with a drainregion of the transistor, wherein the first MTJ cell is coupled to afirst bit line formed in the interlayer dielectric and the second MTJcell is coupled to a second bit line formed in the interlayerdielectric, and wherein a data line is formed between the first MTJ celland a gate electrode of the transistor to be perpendicular to the firstbit line and the second bit line.

The MRAM may further include a pad conductive layer disposed between thefirst MTJ cell and the data line to be coupled to the drain region,wherein the first MTJ cell and the second MTJ cell may be formed on thepad conductive layer. Further, a dummy data line may be formed below thepad conductive layer in a region in which the second MTJ cell is formed.

The MRAM may further include a contact hole formed in the interlayerdielectric to expose a portion of the drain region and a conductive plugfilling the contact hole, wherein the pad conductive layer preferablycontacts an entire exposed surface of the conductive plug filling thecontact hole.

The interlayer dielectric preferably includes a first interlayerdielectric covering the transistor, a second interlayer dielectricformed on the first interlayer dielectric to cover the data line, and athird interlayer dielectric formed between the first and second bitlines and the second interlayer dielectric to surround the padconductive layer, which is stacked on the second interlayer dielectric,and the first and second MTJ cells, which are formed on the padconductive layer.

The MRAM may further include a second contact hole and a third contacthole formed in the third interlayer dielectric to expose predeterminedportions of the first MTJ cell and the second MTJ cell, respectively.The first bit line is preferably formed on the third interlayerdielectric to be coupled to the first MTJ cell through the secondcontact hole. The second bit line is preferably formed on the thirdinterlayer dielectric to be coupled to the second MTJ cell through thethird contact hole.

In the MRAM, the first MTJ cell is preferably a main cell and the secondMTJ cell is preferably a reference cell.

In accordance with another feature of an embodiment of the presentinvention, there is provided a method for fabricating an MRAM, including(1) forming a transistor on a semiconductor substrate, (2) forming afirst interlayer dielectric on the semiconductor substrate to cover thetransistor, (3) forming a first data line on the first interlayerdielectric, (4) forming a second interlayer dielectric on the firstinterlayer dielectric to cover the first data line, (5) forming a padconductive layer on a portion of the second interlayer dielectric to becoupled to a drain region of the transistor, wherein the pad conductivelayer is formed to be symmetric about the drain region, (6) forming afirst MTJ cell and a second MTJ cell spaced apart from the first MTJcell on the pad conductive layer, (7) forming a third interlayerdielectric on the second interlayer dielectric to cover the padconductive layer, the first MTJ cell, and the second MTJ cell, and (8)forming a first bit line coupled to the first MTJ cell and a second bitline coupled to the second MTJ cell on the third interlayer dielectric.

In the method, forming the pad conductive layer on the portion of thesecond interlayer dielectric to be coupled to a drain region of thetransistor may further include forming a first contact hole in the firstinterlayer dielectric and the second interlayer dielectric to be spacedapart from the first data line and to expose a portion of the drainregion of the transistor, and forming the pad conductive layer on theportion of the second interlayer dielectric to fill the first contacthole.

Alternatively, forming the pad conductive layer on the portion of thesecond interlayer dielectric to be coupled to a drain region of thetransistor may further include forming a first contact hole in the firstinterlayer dielectric and the second interlayer dielectric to be spacedapart from the first data line and to expose a portion of the drainregion of the transistor, filling the first contact hole with aconductive plug, and forming the pad conductive layer on the portion ofthe second interlayer dielectric to contact an entire exposed surface ofthe conductive plug.

In the method, forming the first data line on the first interlayerdielectric may further include simultaneously forming a dummy data lineon the first interlayer dielectric to be spaced apart from the firstdata line.

In the method, forming the first bit line coupled to the first MTJ celland the second bit line coupled to the second MTJ cell on the thirdinterlayer dielectric may further include forming a second contact holeand a third contact hole in the third interlayer dielectric to expose aportion of the first MTJ cell and a portion of the second MTJ cell,respectively, and simultaneously forming the first bit line filling thesecond contact hole and the second bit line filling the third contacthole on the third interlayer dielectric.

The MRAM according to the present invention enables integration densityas high as that of an MRAM having a single cell structure, high-speedoperation, a sufficient sensing margin, and reduced noise, and alsoeliminates a voltage offset and reduces current required to record data.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages of the present inventionwill become more apparent to those of ordinary skill in the art bydescribing in detail preferred embodiments thereof with reference to theattached drawings in which:

FIGS. 1 and 2 illustrate circuit diagrams of conventional MRAMs;

FIGS. 3 and 4 respectively illustrate cross-sectional views of a readoperation and a write operation of the conventional MRAM of FIG. 1;

FIG. 5 illustrates a circuit diagram of an MRAM having one transistorand two MTJ layers according to a first embodiment of the presentinvention;

FIG. 6 illustrates a cross-sectional view of the MRAM having onetransistor and two MTJ layers according to the first embodiment of thepresent invention; and

FIGS. 7 through 10 illustrate cross-sectional views of a method forfabricating the MRAM of FIG. 6.

DETAILED DESCRIPTION OF THE INVENTION

Korean Patent Application No. 2003-03476, filed on Jan. 18, 2003, andentitled: “MRAM Including Unit Cell Formed of One Transistor and TwoMTJS and Method for Fabricating The Same,” is incorporated by referenceherein in its entirety.

The present invention will now be described more fully hereinafter withreference to the accompanying drawings, in which preferred embodimentsof the invention are shown. The invention may, however, be embodied indifferent forms and should not be construed as limited to theembodiments set forth herein. Rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fullyconvey the scope of the invention to those skilled in the art. In thedrawings, the thickness of layers and regions and the shapes of someelements are exaggerated for clarity. Like reference numerals refer tolike elements throughout.

First, a circuit configuration of an MRAM according to an embodiment ofthe present invention will be described with reference to FIG. 5.

Referring to FIG. 5, the circuit configuration of the MRAM includes onepass transistor 40, and a first MTJ cell 42 and a second MTJ cell 44,which are coupled in parallel to the pass transistor 40. The first MTJcell 42 is a main cell in which data “0” or “1” is recorded. That is,data can be variably recorded in the first MTJ cell 42, and the datarecorded therein can be changed. The second MTJ cell 44, however, is areference cell in which determined data is recorded. That is, while data“0” or “1” can be variably recorded in the first MTJ cell 42 and thedata “0” or “1” recorded therein can be shifted to be data “1” or “0,”respectively, only determined data can be recorded in the second MTJcell 44 regardless of the data recorded in the first MTJ cell 42. Evenif the data recorded in the first MTJ cell 42 is shifted, the datarecorded in the second MTJ cell 44 does not change.

The first MTJ cell 42 and the second MTJ cell 44 are commonly coupled toa drain of the pass transistor 40. A gate of the pass transistor 40 iscoupled to a word line WL of the MRAM, which is perpendicular to a firstbit line BL and a second bit line /BL. The first bit line BL and thesecond bit line /BL are coupled to the first MTJ cell 42 and the secondMTJ cell 44, respectively. The first bit line BL is used to read datarecorded in the first MTJ cell 42, and is used together with the dataline DL to record data in the first MTJ cell 42. The second bit line/BL, however, is used only to read data recorded in the second MTJ cell44 because data recorded in the second MTJ cell 44 is not shifted evenif data recorded in the first MTJ cell 42 is shifted.

The data line DL, which is used together with the first bit line BL whendata is recorded in the first MTJ cell 42, is formed in parallel withthe word line WL and is magnetically coupled to the first MTJ cell 42.Thus, when current is applied to the data DL to record data, themagnetized state, i.e., the magnetic resistance of the first MTJ cell 42is shifted due to a magnetic field generated from the data line DL.

FIG. 5 shows the data line DL magnetically coupled also to the secondMTJ cell 44. This is because a dummy data line is formed below thesecond MTJ cell 44 during the formation of the data line DL (see DL₂ ofFIG. 6, which will be described subsequently).

A process to read data recorded in the MRAM, i.e., to read data recordedin the first MTJ cell 42, includes applying predetermined read currentsto the first MTJ cell 42 and the second MTJ cell 44, comparing voltagesof the first bit line BL and the second bit line /BL according tomagnetic resistances of the first MTJ cell 42 and the second MTJ cell44, and determining whether data recorded in the first MTJ cell 42 isidentical to data recorded in the second MTJ cell 44. For this, a sensoramplifier (not shown) is coupled between one end of the first bit lineBL and one end of the second bit line /BL.

Unlike the conventional MRAM including a unit cell formed of two passtransistors 22 and 24 as shown in FIG. 2, the MRAM according to thepreferred embodiment of the present invention includes only one passtransistor 40. As a result, a problem of a voltage offset commonlyencountered in the conventional MRAM can be prevented in the MRAM of thepresent invention.

Next, a configuration of a physical MRAM that is equivalent to thecircuital MRAM of the present invention illustrated in FIG. 5 will bedescribed with reference to FIG. 6.

In the physical MRAM illustrated in FIG. 6, field oxide layers 52 areformed in predetermined regions of a semiconductor substrate 50. A wordline WL, i.e., a gate electrode, is disposed on the semiconductorsubstrate 50 between the field oxide layers 52, and a gate insulatinglayer 58 is disposed between the word line WL and the semiconductorsubstrate 50. A source region 54 and a drain region 56 are disposed inthe semiconductor substrate 50 on opposite sides of the word line WL.Together, the word line WL, the source region 54, and the drain region56 form a pass transistor 40. A first interlayer dielectric (ILD) 60 isformed over the semiconductor substrate 50 to cover the word line WL. Afirst data line DL₁ and a second data line DL₂ are formed on the firstILD 60 to be parallel to the word line WL. The first data line DL₁ ispreferably formed on the first ILD 60 to correspond to a position atwhich the word line WL is formed. The first data line DL₁ is actuallyused to record data. The second data line DL₂ is formed on the first ILD60 to correspond to a position at which the field oxide layer 52 isformed. The second data line DL₂ is a dummy data line, and is not usedto record data, unlike the first data line DL₁. For this reason, thesecond data line DL₂ may be omitted from the MRAM. The first data lineDL₁ is spaced apart from the second data line DL₂ by a predetermineddistance. A second ILD 62 is formed to a predetermined thickness on thefirst ILD 60 to cover the first data line DL₁ and the second data lineDL₂. The second ILD 62 is uniformly formed. A first contact hole h₁,which exposes the source region 54, is formed in the first ILD 60 andthe second ILD 62 between the first data line DL₁ and the second dataline DL₂. The first contact hole h₁ is filled with a conductive plug 64.A pad conductive layer 66 is formed on an entire surface of theconductive plug 64 and on the second ILD 62 disposed around theconductive plug 64. The pad conductive layer 66 preferably extends in adirection upward of the first data line DL₁ and the second data lineDL₂. A first MTJ cell 42 and a second MTJ cell 44 are disposed on thepad conductive layer 66. The second MTJ cell 44 is a reference cellrequired for determining data recorded in the first MTJ cell 42. Thefirst MTJ cell 42 is spaced apart from the second MTJ cell 44 by a samedistance as the predetermined distance between the first data line DL₁and the second data line DL₂. For this reason, the first MTJ cell 42 andthe second MTJ cell 44 are preferably positioned directly over the firstdata line DL₁ and the second data line DL₂, respectively. A third ILD 68is formed on the second ILD 62 to cover the pad conductive layer 66, thefirst MTJ cell 42, and the second MTJ cell 44. A second contact hole h₂and a third contact hole h₃ are formed in the third ILD 68 to exposeportions of the first MTJ cell 42 and the second MTJ cell 44,respectively. A first bit line BL and a second bit line /BL are disposedon the third ILD 68. The first bit line BL fills the second contact holeh₂ and contacts the first MJT cell 42, while the second bit line /BLfills the third contact hole h₃ and contacts the second MTJ cell 44. Thefirst bit line BL is spaced apart from the second bit line /BL. Thefirst bit line BL and the second bit line /BL are perpendicular to thefirst data line DL₁ and the second data line DL₂. A fourth ILD 70 isdisposed on the third ILD 68 to cover the first bit line BL and thesecond bit line /BL.

As described above, the MRAM according to the present inventioncomprises one pass transistor, which includes a word line WL, a sourceregion 54, and a drain region 56, and two MTJ cells 42 and 44, which arecoupled in parallel with the drain region 56. Thus, the MRAM accordingto the present invention requires a smaller area per unit cell than theconventional MRAM having a twin cell structure as shown in FIG. 2. As aresult, the integration density can be improved.

Typically, because the pass transistor is turned off during a data readoperation, a current flowing through the MTJ cell is zero (0). However,in the MRAM of the present invention, the MTJ cell includes an upperplate, a lower plate, and an insulating layer disposed therebetween, andcurrent may flow through the lower plate of the MTJ cell. Accordingly,in the present invention, currents applied to the bit line and the dataline for shifting a polarized state of the MTJ cell can be minimizedduring a data recording operation.

Hereinafter, a method for fabricating the MRAM of the present inventionwill be described.

Referring to FIG. 7, an active region, where elements are formed, and aninactive region (i.e., a field region) are defined in a semiconductorsubstrate 50. Field oxide layers 52 are formed on the field region. Agate insulating layer 58 and a word line WL (i.e., a gate electrode) aresequentially stacked as a gate stack on the active region between thefield oxide layers 52. A gate spacer 59 is formed on the sidewalls ofthe gate stack. Conductive impurity ions are implanted into thesemiconductor substrate 50, thereby forming a source region 54 and adrain region 56 in the semiconductor substrate 50 between the gatespacer 59 and the field oxide layers 52. In doing so, a pass transistorsuch as that shown in FIG. 5 is formed on the semiconductor substrate50. In a case in which the semiconductor substrate 50 is an n-typesemiconductor substrate, the conductive impurity ions are preferablyp-type ions. In a case in which the semiconductor substrate 50 is ap-type semiconductor substrate, the conductive impurity ions arepreferably n-type ions.

Referring to FIG. 8, a first ILD 60 is formed on the semiconductorsubstrate 50 to cover the resultant structure on which the gate spacer59 is formed, and then the first ILD 60 is planarized. A first data lineDL₁ and a second data line DL₂ are formed on the first ILD 60. The firstdata line DL₁ is spaced apart from the second data line DL₂ by apredetermined distance. The first data line DL₁, a conductive line, isactually used to record data and is preferably formed directly over andparallel to the word line WL. The second data line DL₂, however, is adummy data line and is not used to record data. The second data line DL₂is formed over field oxide layer 52. The second data line DL₂ may beomitted from the MRAM. A second ILD 62 is formed on the first ILD 60 tocover the entire surface of the first data line DL₁ and the second dataline DL₂ and then is planarized.

Referring to FIG. 9, a first contact hole h₁, which exposes the drainregion 56, is formed in the first ILD 60 and the second ILD 62 betweenthe first data line DL₁ and the second data line DL₂. A conductive plug64 fills the first contact hole h₁. A pad conductive layer 66 is formedon the second ILD 62 to cover the entire surface of the conductive plug64. The pad conductive layer 66 is preferably formed of the samematerial as the conductive plug 64. In a case in which the first contacthole h₁ is deeply formed, i.e., in a case in which an aspect ratio ishigh, it is preferable that the conductive plug 64 and the padconductive layer 66 are separately formed as described above. However,in a case in which the first contact hole h₁ is shallowly formed, thepad conductive layer 66 and the conductive plug 64 may be formed at thesame time.

Meanwhile, considering that two MTJ cells are spaced apart from eachother on the pad conductive layer 66 and data is recorded in the MRAM asdescribed below, the two MTJ cells are preferably formed directly overthe first data line DL₁ and the second data line DL₂, respectively.Thus, the pad conductive layer 66 is preferably extended in a directionupward of the first data line DL₁ and the second data line DL₂.

Next, a first MTJ cell 42 and a second MTJ cell 44 are formed on the padconductive layer 66. The first MTJ cell 42 and the second MTJ cell 44are preferably formed at positions corresponding to the first data lineDL₁ and the second data line DL₂, respectively. Accordingly, the firstMTJ cell 42 is preferably spaced apart from the second MTJ cell 44 bythe same distance as the distance between the first data line DL₁ andthe second data line DL₂. As described above, the first MTJ cell 42 andthe second MTJ cell 44 are formed on the pad conductive layer 66. As aresult, the first MTJ cell 42 and the second MTJ cell 44 are coupled tothe pass transistor, including the gate stack, the source region, andthe drain region, through the pad conductive layer 66 and the conductiveplug 64. That is, the first MTJ cell 42 and the second MTJ cell 44 arecoupled in parallel with the pass transistor. A third ILD 68 is formedon the second ILD 62 to cover the pad conductive layer 66, the first MTJcell 42, and the second MTJ cell 44, and then the third ILD 68 isplanarized.

Referring to FIG. 10, a second contact hole h₂ and a third contact holeh₃ are formed in the third ILD 68 to expose portions of the first MTJcell 42 and the second MTJ cell 44, respectively. Then, a first bit lineBL is formed on the third ILD 68 to fill the second contact hole h₂ andcontact the exposed portion of the first MTJ cell 42. Simultaneously, asecond bit line /BL is formed to fill the third contact hole h₃ andcontact the exposed portion of the second MTJ cell 44. The first bitline BL is preferably formed to be perpendicular to the word line WL,the first data line DL₁ and the second data line DL₂. The second bitline /BL is formed to be spaced apart from the first bit line BL by apredetermined distance and is preferably formed in parallel with thefirst bit line BL. A fourth ILD 70 is then formed on the third ILD 68 tocover the first bit line BL and the second bit line /BL.

As described above, the MRAM according to the present invention includesa unit cell formed of one pass transistor and two MTJ cells. One of theMTJ cells that are coupled in parallel with the pass transistor is amain cell in which data can be recorded, and the other is a referencecell in which determined data is recorded. Thus, the MRAM of the presentinvention has an integration density as high as that of an MRAM having asingle cell structure, and enables sufficient sensing margin, high-speedoperation, and reduced noise. Further, unlike an MRAM having a twin cellstructure, since the MRAM according to the present invention includes aunit cell formed of one pass transistor, voltage offset is eliminated.In addition, the MRAM of the present invention allows current to flowthrough a lower plate of an MTJ cell during a recording operation, whenthe pass transistor is typically turned off. Thus, reduced current isrequired to record data in the MRAM of the present invention.

Preferred embodiments of the present invention have been disclosedherein and, although specific terms are employed, they are used and areto be interpreted in a generic and descriptive sense only and not forpurpose of limitation. For example, those of ordinary skill in the artwill understand that the first data line DL₁ and the second data lineDL₂ may be formed as a double layer. Also, those of ordinary skill inthe art will understand that the first MTJ cell and the second MTJ cellmay be formed using different processes and different materials.Accordingly, it will be understood by those of ordinary skill in the artthat various changes in form and details may be made without departingfrom the spirit and scope of the present invention as set forth in thefollowing claims.

1. An MRAM comprising: a semiconductor substrate; a transistor formed onthe semiconductor substrate; an interlayer dielectric formed on thesemiconductor substrate to cover the transistor; and first and secondMTJ cells formed in the interlayer dielectric to be coupled in parallelwith a drain region of the transistor, wherein the first MTJ cell iscoupled to a first bit line formed in the interlayer dielectric and thesecond MTJ cell is coupled to a second bit line formed in the interlayerdielectric, and wherein a data line is formed between the first MTJ celland a gate electrode of the transistor to be perpendicular to the firstbit line and the second bit line.
 2. The MRAM as claimed in claim 1,further comprising a pad conductive layer disposed between the first MTJcell and the data line to be coupled to the drain region, wherein thefirst MTJ cell and the second MTJ cell are formed on the pad conductivelayer.
 3. The MRAM as claimed in claim 2, further comprising a dummydata line formed below the pad conductive layer in a region in which thesecond MTJ cell is formed.
 4. The MRAM as claimed in claim 2, furthercomprising: a contact hole formed in the interlayer dielectric to exposea portion of the drain region; and a conductive plug filling the contacthole, wherein the pad conductive layer contacts an entire exposedsurface of the conductive plug filling the contact hole.
 5. The MRAM asclaimed in claim 2, wherein the interlayer dielectric comprises a firstinterlayer dielectric covering the transistor, a second interlayerdielectric formed on the first interlayer dielectric to cover the dataline, and a third interlayer dielectric formed between the first andsecond bit lines and the second interlayer dielectric to surround thepad conductive layer, which is formed on the second interlayerdielectric, and the first and second MTJ cells, which are stacked on thepad conductive layer.
 6. The MRAM as claimed in claim 5, furthercomprising a second contact hole and a third contact hole formed in thethird interlayer dielectric to expose predetermined portions of thefirst MTJ cell and the second MTJ cell, respectively.
 7. The MRAM asclaimed in claim 6, wherein the first bit line is formed on the thirdinterlayer dielectric to be coupled to the first MTJ cell through thesecond contact hole.
 8. The MRAM as claimed in claim 6, wherein thesecond bit line is formed on the third interlayer dielectric to becoupled to the second MTJ cell through the third contact hole.
 9. TheMRAM as claimed in claim 1, wherein the first MTJ cell is a main celland the second MTJ cell is a reference cell.